PCF8563 Datasheet, PDF (5/23 Pages) NXP Semiconductors – Real-time clock/calendar

PCF8563
Characteristics
Low-level output
current;pin INT
Low-level output
current;pin CLKOUT
High-level output
current;pin CLKOUT
Output leakage current
Voltage Detector
Voltage-low detection
level
Symbol Test conditions
I _OL(INT)
I _OL(CLKO
UT)
I _OH(CLKO
UT)
I _LO
V _OH =4.6V;
V _DD =5V
V _O =V _DD or V _SS
Min
-1
-1
1
-1
Ty p .
Max
+1
V _LOW Ta=25° C
0.9 1.0
Unit
mA
mA
mA
µA
V
*1 For reliable oscillator start-up at power-up: V _DD (min)power-up = V _DD (min) + 0.3 V.
*2 Timer source clock = 1¤60 Hz; SCL and SDA = V _DD .
*3 Tested on sample basis.
DYNAMIC ELECTRICAL CHARACTERISTICS
（ Unless otherwise specified， V _DD = 1.8 to 5.0 V; Vss = 0 V; Tamb =- 40 to 85° C;
f _OSC = 32.768 kHz; quartz Rs = 40 kΩ; C _L = 8 pF; ）
Characteristics
Symbol Test conditions
Oscillator
Integrated load
capacitance
C _L(integrat
ed)
Oscillator stability
∆f _OSC /f _O ∆V _DD =200mV
SC
Ta=25° C
Quartz crystal parameters (f _OSC =32.768kHz)
Series resistance
R_S
Parallel load
capacitance
C_L
Trimmer capacitance
C_T
CLKOUT output
CLKOUT duty factor
δ _CLKOUT *1
I ² C-bus timing characteristics *2
SCL clock frequency
f _SCL
*3
START condition hold
time
t _HD;STA
Set-up time for a
repeated START
condition
t _SU;STA
SCL low time
SCL high time
t _LOW
t _HIGH
Min Typ. Max
15 25 35
2×10 ^-7
40
10
5
25
50
400
0.6
0.6
1.3
0.6
Unit
pF
kΩ
pF
pF
%
kHz
µs
µs
µs
µs
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