TIP35C Datasheet, PDF (1/1 Pages) STMicroelectronics – COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

TIGER ELECTRONIC CO.,LTD
Product specification
Complementary Silicon High Power Ttransistors
TIP35C / TIP36C
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
Symbol Value Unit
Collector-Base Voltage
V_CBO
100
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
V_CEO
V_EBO
I_C
I_B
P_tot
T_j
T_stg
100 V
5
V
25
A
5
A
125 W
150 ^oC
-55~150 ^oC
TO-3PN
ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol
Test Conditions
Collector Cut-off Current
I_CEO V_CB=60V, I_E=0
Emitter Cut-off Current
I_EBO V_EB=5V, I_C=0
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
V_CEO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE
I_C=30mA, I_B=0
V_CE=4V, I_C=1.5A
V_CE=4V, I_C=15A
I_C=25A,I_B=5A
V_CE=4V,I_C=15A
Transition Frequency
f_T
V_CE=5V,I_C=1A
Min.
100
25
10
3
Typ. Max. Unit
1.0 mA
1.0 mA
V
60
4.0 V
2.0 V
MHz