TIP122 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, HAMMER DRIVER,PULSE MOTOR DRIVER)

TIGER ELECTRONIC CO.,LTD
Product specification
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS _{TIP122 / TIP127}
DESCRIPTION
The TIP122 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington
configuration mounted in Jedec TO-220 plastic package. They are intented for use in power
linear and switching applications.The complementary PNP types are TIP127 respectively.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
Symbol Value Unit
Collector-Base Voltage
V_CBO
100
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
V_CEO
V_EBO
I_C
I_B
P_tot
T_j
T_stg
100 V
5
V
5.0 A
0.1 A
65 W
150 ^oC
-55~150 ^oC
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol
Test Conditions
Collector Cut-off Current
I_CEO V_CB=100V, I_E=0
Emitter Cut-off Current
I_EBO V_EB=5V, I_C=0
Collector-Emitter Sustaining Voltage
DC Current Gain
V_CEO
h_FE(1)
h_FE(2)
I_C=30mA, I_B=0
V_CE=3V, I_C=0.5A
V_CE=3V, I_C=3.0A
Collector-Emitter Saturation Voltage
V_CE(sat) ^{IC=3.0A,IB=12mA}
I_C=5.0A,I_B=20mA
Base-Emitter Saturation Voltage
V_BE(sat) V_CE=3V,I_C=3.0A
Min.
100
1000
1000
Typ. Max. Unit
0.5 mA
2.0 mA
V
2
V
4
2.5 V