TG430 Datasheet, PDF (1/1 Pages) Tiger Electronic Co.,Ltd – 500V N-Channel MOSFET

TGS
500V N-Channel MOSFET
TIGER ELECTRONIC CO., LTD.
Product specification
TG430
DESCRIPTION
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
l
Value Unit
Drain-Source Voltage
Drain Current - Continuous
Drain Current - Pulsed
Gate-Source Voltage
Power Dissipation
Max. Operating Junction Temperature
Storage Temperature
V_DSS
I_D
I_DM
V_GSS
P_D
T_j
T_stg
500 V
4.5 A
18
A
±30 V
85 W
150 ^oC
-55~150 ^oC
TO-252
ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol Test Conditions
Drain-Source Breakdown Voltage
BV_DSS V_GS = 0V, I_D =250_μA
Zero Gate Voltage Drain Current
I_DSS V_DS =500V, V_GS =0V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
I_GSSF
I_GSSR
V_GS(th)
V_GS =30V, V_DS =0V
V_GS = -30V, V_DS =0V
V_DS = V_GS , I_D =250μA
Static Drain-Source On-Resistance
R_DS(on) V_GS = 10 V, I_D = 2.25 A
Drain-Source Diode Forward Voltage
V_SD V_GS = 0 V, I_S = 4.5 A
Min.
500
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3.0
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Typ.
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—
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1.36
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Max. Unit
—
V
1.0 uA
100 nA
-100 nA
5.0 V
1.8 ^W
1.4 V