STN1A60 Datasheet, PDF (1/1 Pages) SemiWell Semiconductor – Bi-Directional Triode Thyristor

TIGER ELECTRONIC CO.,LTD
Silicon Bidirectional Triode Thyristors
GENERAL DESCRIPTION
Designed for use in solid state relays, MPU interface, TTL logic and
any other light industrial or consumer application. Supplied in an
inexpensive TO - 92 package which is readily adaptable for use in
automatic insertion equipment.
STN1A60/80
Parameter
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
Max. Operating Junction
Temperature
Storage Temperature
Symbol
Typ
Unit
STN1A60 STN1A80
VV_DRRRMM
600
800
V
I_T(RMS)
1.0
A
I_TSM
10
A
T_j
110
o_C
T_stg
-45~150
o_C
Parameter
Symbol Test Conditions
Repetitive peak off-state voltage
s
RMS on-state current
On-state voltage
Holding current
T2+G+
Gate trigger
current
T2+G-
T2-G-
T2-G+
Gate trigger voltage
VV_DRRRMM
I_T(RMS)
V_T
I_H
all conduction angles
I_T=1.5 A
V_D =12 V; I_GT=10 mA
I_GT V_D =6.0 V; R_L= 10Ω
V_GT V_D =6.0 V; R_L= 10Ω
Min
Typ
Max Unit
STN1A60 STN1A80
— 600 800 — V
—
1.0
—A
—
—
1.60 V
—
—
5 mA
—
—
5.0
—
—
5.0 _mA
—
—
5.0
—
—
12
—
0.5
1.8 V