SI2307BDS Datasheet, PDF (1/2 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

TIGER ELECTRONIC CO.,LTD
SMD Type
TransistIoCrs
P-Channel 30-V (D-S) MOSFET
SI_K23_I20₃7₀B_7BD_DS_S
Features
TrenchFET Power MOSFET
RoHS Compliant
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1^1..^BG^asa^e te
22.ESmoituterrce
33..cDollreactionr
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150 ) * TA=25
------------------------------------------------TA=70
Pulsed Drain Current *
Continuous Source Current (diode conduction) *2
Power Dissipation *
TA=25
-------------------------------------------------TA=70
Jumction Temperature
Storage Temperature
* Surface Mounted on FR4 Board.
Symbol
VDS
VGS
ID
IDM
IS
PD
Tj
Tstg
5 sec
Steady State
Unit
-30
V
20
V
-3.2
-2.5
-2.6
-2.0
A
-12
A
-1.25
-0.75
A
1.25
0.75
0.8
0.48
W
150
-55 to +150
Thermal Resistance Ratings Ta = 25
Parameter
Maximum Junction-to-Ambient *1
Maximum Junction-to-Ambient *2
Steady State
Symbol
RthJA
Typical
80
130
Maximum
100
166
Unit
/W
* 1. Surface Mounted on FR4 Board, t 5 sec.
* 2. Surface Mounted on FR4 Board.
1