SCD6C60 Datasheet, PDF (1/1 Pages) SemiWell Semiconductor – Silicon Controlled Rectifiers

TIGER ELECTRONIC CO.,LTD
Product specification
Silicon Controlled Rectifiers
SCD6C60
DESCRIPTION
Standard gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
Symbol Typ Unit
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
Max. Operating Junction
Temperature
Storage Temperature
V_DRM
V_RRM
600
V
I_T(AV)
3.8
A
I_T(RMS)
6.0
A
I_TSM
66
A
T_j
110
o_C
T_stg
-45~150 ^oC
TO-252
ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Repetitive peak off-state voltages
V_DRM
V_RRM
600 —
—V
Average on-state current
I_T(AV) half sine wave; T_mb< 103 ^oC
—
3.8
—A
RMS on-state current
On-state voltage
Holding current
Latching current
Gate trigger current
Gate trigger voltage
I_T(RMS)
V_TM
I_H
I_L
I_GT
V_GT
all conduction angles
I_TM=9.0A,tp=380μs
V_D =12 V; I_GT = 0.1 A
V_D =12 V; I_GT = 0.1 A
V_D =12 V; I_T = 0.1 A
V_D =12 V; I_T = 0.1 A
—
6.0
—A
—
— 1.6 V
—
—
20 mA
—
—
50 ^mA
—
—
15 ^mA
—
—
1.5 ^V