S9015 Datasheet, PDF (1/3 Pages) Weitron Technology – PNP General Purpose Transistors

TIGER ELECTRONIC CO.,LTD
S9015
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The S9015 is designed for use in pre-amplifier of low level and low
noise.
Features
• High Total Power Dissipation. (PD:450mW)
• Complementary to S9014
• High hFE and Good Linearity.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................... -55~+150°C
Junction Temperature ..................................................................................... +150°C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 450 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 50 V
VCEO Collector to Emitter Voltage ...................................................................................... 45 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current ........................................................................................................ 100 mA
Characteristics (Ta=25°C)
Symbol
Min.
BVCBO
50
BVCEO
45
BVEBO
5.0
ICBO
-
IEBO
-
VCE(sat)
-
VBE(sat)
-
VBE(on)
0.6
hFE
100
Cob
-
fT
100
Typ.
-
-
-
-
-
0.20
0.82
0.65
200
4.5
190
Max.
-
-
-
50
50
0.7
1.0
0.75
600
7.0
-
Unit
V
V
V
nA
nA
V
V
V
pF
MHz
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
IC=100mA, IB=5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=1mA
VCB=10V, f=1MHz, IE=0
VCE=5V, IC=10mA
Classification on hFE1
Rank
Range
B
100-300
C
200-600
TIGER ELECTRONIC CO.,LTD