S9012 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors

TIGER ELECTRONIC CO.,LTD
S9012
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The S9012 is designed for use in 1W output amplifier of portable radios
in class B push-pull operation.
Features
• High total power dissipation. (PT:625mW)
• High collector current. (IC:500mA)
• Complementary to S9013
• Excellent linearity.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................................... -55~+150°C
Junction Temperature ................................................................................................. +150°C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).............................................................................................. 625mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage...................................................................................................... 40 V
VCEO Collector to Emitter Voltage................................................................................................... 20 V
VEBO Emitter to Base Voltage........................................................................................................... 5 V
IC Collector Current .................................................................................................................... 500 mA
Icp Base Current ......................................................................................................................... 100 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
40
-
BVCEO
20
-
BVEBO
5.0
-
ICBO
-
-
IEBO
-
-
VCE(sat)
-
-
VBE(sat)
-
-
VBE(on)
-
-
hFE1
112
180
hFE2
40
-
Cob
-
-
fT
100
-
Max.
-
-
-
100
100
0.6
1.2
0.9
300
-
8
-
Unit
V
V
V
nA
nA
V
V
V
pF
MHz
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCE=25V, IE=0
VEB=3V, IC=0
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=500mA
VCB=10V, f=1MHz
VCE=1V, IC=10mA, f=100MHz
Classification on hFE1
Rank
Range
G
112-166
H
144-202
I1
176-246
I2
214-300
TIGER ELECTRONIC CO.,LTD