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| MPSA06 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN general purpose transistor | |||
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TIGER ELECTRONIC CO.,LTD
MPSA06
TO-92 Transistor (NPN)
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
Features
 Power amplifier
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
RθJA
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance,Junction to Ambient
Value
80
80
4
0.5
625
150
-55-150
417
Units
V
V
V
A
mW
â
â
â/W
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol Test conditions
V(BR)CBO IC=100μA, IE=0
V(BR)CEO IC= 1mA , IB=0
V(BR)EBO IE=100μA, IC=0
ICBO
VCB=80V, IE=0
ICEO
VCE=60V, IB=0
IEBO
VEB=3V, IC=0
hFE1
VCE=1V, IC= 100mA
hFE2
VCE=1V, IC= 10mA
VCE(sat) IC=100mA, IB=10mA
VBE(sat)
fT
IC= 100mA, IB=10mA
VCE=2V, IC= 10mA
f = 100MHz
MIN MAX UNIT
80
V
80
V
4
V
0.1
μA
0.1
μA
0.1
μA
100 400
100
0.25
V
1.2
V
100
MHz
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