MMBTA42LT1 Datasheet, PDF (1/3 Pages) Motorola, Inc – High Voltage Transistors

TIGER ELECTRONIC CO.,LTD
MMBTA42LT1
NPN EPITACIAL PLANAR TRANSISTOR
Description
High Voltage Transistor
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................... -55~+150°C
Junction Temperature..................................................................................... +150°C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... 300 V
VCEO Collector to Emitter Voltage .................................................................................... 300 V
VEBO Emitter to Base Voltage ........................................................................................... 6.0 V
IC Collector Current ........................................................................................................ 500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
300
-
BVCEO
300
-
BVEBO
6
-
ICBO
-
-
IEBO
-
-
VCE(sat)
-
-
VBE(sat)
-
-
hFE1
25
-
hFE2
40
-
hFE3
40
-
fT
50
-
Cob
-
-
Max.
-
-
-
100
100
500
900
-
-
-
-
3
Unit
V
V
V
nA
nA
mV
mV
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=200V
VEB=6V
IC=20mA, IB=2mA
IC=20mA, IB=2mA
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=30mA, VCE=10V
IC=10mA, VCE=20V, f=100MHz
VCB=20V, f=1MHz
TIGER ELECTRONIC CO.,LTD