MMBT5401LT1 Datasheet, PDF (1/3 Pages) Motorola, Inc – High Voltage Transistor

TIGER ELECTRONIC CO.,LTD
MMBT5401LT1
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The MMBT5401LT1 is designed for general purpose applications
requiring high breakdown voltages.
Features
• High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA)
• Complements to NPN Type MMBT5551LT1.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature .............................................................................................. -55~+150 °C
Junction Temperature ..................................................................................... +150°C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... 160 V
VCEO Collector to Emitter Voltage .................................................................................... 150 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current ......................................................................................................... 500mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
160
-
BVCEO
150
-
BVEBO
5
-
ICBO
-
-
VCE(sat)1
-
-
VCE(sat)2
-
-
VBE(sat)1
-
-
VBE(sat)2
-
-
hFE1
50
-
hFE2
60
-
hFE3
50
-
fT
100
-
Cob
-
-
Max.
-
-
-
50
200
500
1
1
-
240
-
300
6
Unit
V
V
V
nA
mV
mV
V
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=120V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, f=1MHZ
TIGER ELECTRONIC CO.,LTD