MMBT4403LT1 Datasheet, PDF (1/3 Pages) Motorola, Inc – Switching Transistor

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MMBT4403LT1
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The MMBT4403LT1 is designed for general purpose applications
requiring high breakdown voltages.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................... -55~+150°C
Junction Temperature......................................................................................................+150°C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 40 V
VCEO Collector to Emitter Voltage ...................................................................................... 40 V
VEBO Emitter to Base Voltage ........................................................................................... 5.0 V
IC Collector Current ....................................................................................................... 600 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
40
-
BVCEO
40
-
BVEBO
5.0
-
ICEX
-
-
VCE(sat)1
-
-
VCE(sat)2
-
-
VBE(sat)1
-
-
VBE(sat)2
-
-
hFE1
30
-
hFE2
60
-
hFE3
100
-
hFE4
100
-
hFE5
20
-
fT
200
-
Cob
-
-
Max.
-
-
-
100
400
750
950
1.3
-
-
-
300
-
-
8.5
Unit
V
V
V
nA
mV
mV
mV
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=100uA
VCE=35V, VBE=0.4V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=2V, IC=150mA
VCE=2V, IC=500mA
VCE=10V, IC=20mA, f=100MHz
VCB=10V, f=1MHz
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