MMBT4401LT1 Datasheet, PDF (1/3 Pages) Motorola, Inc – Switching Transistor

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MMBT4401LT1
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The MMBT4401LT1 is designed for general purpose switching and
amplifier applications.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................... -55~+150°C
Junction Temperature......................................................................................................+150°C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 60 V
VCEO Collector to Emitter Voltage ...................................................................................... 40 V
VEBO Emitter to Base Voltage .............................................................................................. 6 V
IC Collector Current ....................................................................................................... 600 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
60
-
BVCEO
40
-
BVEBO
6
-
ICEX
-
-
VCE(sat)1
-
-
VCE(sat)2
-
-
VBE(sat)1
-
-
VBE(sat)2
-
-
hFE1
20
-
hFE2
40
-
hFE3
80
-
hFE4
100
-
hFE5
40
-
fT
250
-
Cob
-
-
Max.
-
-
-
100
0.4
750
950
1.2
-
-
-
300
-
-
6.5
Unit
V
V
V
nA
V
mV
mV
V
MHz
PF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCE=35V, VBE=-0.4V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
VCE=10V, IC=20mA, f=100MHz
VCB=5V, f=1MHz
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