MMBT3906LT1 Datasheet, PDF (1/3 Pages) Motorola, Inc – General Purpose Transistor

TIGER ELECTRONIC CO.,LTD
MMBT3906LT1
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The MMBT3906LT1 is designed for general purpose switching and
amplifier applications.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................... -55~+150°C
Junction Temperature......................................................................................................+150°C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 40 V
VCEO Collector to Emitter Voltage ...................................................................................... 40 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current ........................................................................................................ 200mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
40
-
BVCEO
40
-
BVEBO
5
-
ICEX
-
-
VCE(sat)1
-
-
VCE(sat)2
-
0.2
VBE(sat)1 0.65
-
VBE(sat)2
-
0.84
hFE1
60
-
hFE2
80
-
hFE3
100
-
hFE4
60
-
hFE5
30
-
fT
250
-
Cob
-
-
Max.
-
-
-
50
0.25
0.4
0.85
0.95
-
-
300
-
-
-
4.5
Unit
V
V
V
nA
V
V
V
V
MHz
pF
Test Conditions
IC=10uA
IC=1mA
IC=10uA
VCE=30V, VBE=3V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
VCB=5V, f=1MHz
TIGER ELECTRONIC CO.,LTD