MMBT3904LT1 Datasheet, PDF (1/3 Pages) Motorola, Inc – General Purpose Transistor

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MMBT3904LT1
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The MMBT3904LT1 is designed for general purpose switching amplifier
applications.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................... -65~+150°C
Junction Temperature......................................................................................................+150°C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 60 V
VCEO Collector to Emitter Voltage ...................................................................................... 40 V
VEBO Emitter to Base Voltage .............................................................................................. 6 V
IC Collector Current ....................................................................................................... 200 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
60
-
BVCEO
40
-
BVEBO
6
-
ICEX
-
-
VCE(sat)1
-
-
VCE(sat)2
-
-
VBE(sat)1
650
-
VBE(sat)2
-
-
hFE1
40
-
hFE2
70
-
hFE3
100
-
hFE4
60
-
hFE5
30
-
fT
300
-
Cob
-
-
Max.
-
-
-
50
200
300
850
950
-
-
300
-
-
-
4
Unit
V
V
V
nA
mV
mV
mV
mV
MHz
pF
Test Conditions
IC=10uA
IC=1mA
IC=10uA
VCE=30V, VBE=-3V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
VCB=5V, f=1MHz
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