MMBT2907ALT1 Datasheet, PDF (1/3 Pages) Avic Technology – SOT-23 Plastic-Encapsulate Transistors

TIGER ELECTRONIC CO.,LTD
MMBT2907ALT1
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The MMBT2907ALT1 is designed for general purpose amplifier and high
-speed switching, medium power switching applications.
Features
• Low Collector Saturation Voltage.
• High Speed Switching.
• For Complementary Use With NPN Type HMBT2222A.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................... -55~+150°C
Junction Temperature......................................................................................................+150°C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 60 V
VCEO Collector to Emitter Voltage ...................................................................................... 60 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current ....................................................................................................... 600 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
60
-
BVCEO
60
-
BVEBO
5
-
ICBO
-
-
ICEX
-
-
VCE(sat)1
-
0.2
VCE(sat)2
-
0.5
VBE(sat)1
-
-
VBE(sat)2
-
-
hFE1
75
-
hFE2
100
-
hFE3
100
-
hFE4
100
180
hFE5
50
-
fT
200
-
Cob
-
-
Max.
-
-
-
10
50
0.4
1.6
1.3
2.6
-
-
-
300
-
-
8
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=10uA
IC=10mA
IC=10uA
VCB=50V
VCE=30V, VBE=0.5V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCB=20V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
TIGER ELECTRONIC CO.,LTD