MMBT2222ALT1 Datasheet, PDF (1/3 Pages) Avic Technology – SOT-23 Plastic-Encapsulate Transistors

TIGER ELECTRONIC CO.,LTD
MMBT2222ALT1
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The MMBT2222ALT1 is designed for general purpose amplifier and
high-speed switching, medium-power switching applications.
Features
• High frequency current gain.
• High Speed Switching.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................... -55~+150°C
Junction Temperature......................................................................................................+150°C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 75 V
VCEO Collector to Emitter Voltage ...................................................................................... 40 V
VEBO Emitter to Base Voltage .............................................................................................. 6 V
IC Collector Current ....................................................................................................... 600 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
75
-
BVCEO
40
-
BVEBO
6
-
ICBO
-
-
ICEX
-
-
IEBO
-
-
VCE(sat)1
-
-
VCE(sat)2
-
-
VBE(sat)1
-
-
VBE(sat)2
-
-
hFE1
35
-
hFE2
50
-
hFE3
75
-
hFE4
100
-
hFE5
40
-
fT
300
-
Max.
-
-
-
10
10
10
500
1.0
1.2
2.0
-
-
-
300
-
-
Unit
V
V
V
nA
nA
nA
mV
V
V
V
MHz
Test Conditions
IC=10uA
IC=10mA
IC=10uA
VCB=60V
VCE=60V, VEB(OFF)=3V
VEB=3V
IC=380mA, IB=10mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCB=20V, IC=20mA, f=100MHz
TIGER ELECTRONIC CO.,LTD