MJE3055T Datasheet, PDF (1/1 Pages) Wing Shing Computer Components – SILICON EPITAXIAL PLANAR TRANSISTOR

TIGER ELECTRONIC CO.,LTD
E
Product specification
Complementary Silicon Power Ttransistors
MJE3055T / MJE2955T
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
Symbol Value Unit
Collector-Base Voltage
V_CBO
70
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
V_CEO
V_EBO
I_C
I_B
P_tot
T_j
T_stg
60
V
5
V
10
A
6
A
75 W
150 ^oC
-55~150 ^oC
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol
Test Conditions
Collector Cut-off Current
I_CEO V_CB=60V, I_E=0
Emitter Cut-off Current
I_EBO V_EB=5V, I_C=0
Collector-Emitter Sustaining Voltage
DC Current Gain
V_CEO
h_FE(1)
h_FE(2)
I_C=100mA, I_B=0
V_CE=4V, I_C=4.0A
V_CE=4V, I_C=10.0A
Collector-Emitter Saturation Voltage
V_CE(sat) ^{IC=4.0A,IB=400mA}
I_C=10.0A,I_B=3.3A
Base-Emitter Saturation Voltage
V_BE(sat) V_CE=4V,I_C=4.0A
Current Gain Bandwidth Product
f_T
V_CE=10V,I_C=500mA
Min.
60
20
5
2
Typ. Max. Unit
0.3 mA
5.0 mA
V
100
1.1
V
8.0
1.8 V
MHz