MJE13007 Datasheet, PDF (1/1 Pages) Motorola, Inc – POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS

TIGER ELECTRONIC CO.,LTD
Silicon NPN Power Transistor
Product specification
MJE13007
DESCRIPTION
Silicon NPN, high power transistors in a plastic envelope, primarily
for use in high-speed power switching circuits.
Absolute Maximum Ratings ( Ta = 25 ^OC)
Parameter
l
Value Unit
Collector-Base Voltage
V_CBO
700
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
V_CEO
V_EBO
I_C
I_B
P_tot
T_j
T_stg
400 V
9
V
8.0 A
4
A
80 W
150 ^oC
-55~150 ^oC
TO-220
Electrical Characteristics ( Ta = 25 ^OC)
Parameter
Symbol Test Conditions
Collector Cut-off Current
Emitter Cut-off Current
I_CBO
I_EBO
V_CE=700V, I_E=0
V_EB=9V, I_C=0
Collector-Emitter Sustaining Voltage
DC Current Gain
V_CEO
h_FE(1)
h_FE(2)
I_C=10mA, I_B=0
V_CE=5V, I_C=2.0A
V_CE=5V, I_C=5.0A
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=8.0A,I_B=2.0A
I_C=5.0A,I_B=1.0A
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn Off Time
V_BE(sat)
f_T
C_ob
t_S
I_C=5.0A,I_B=1.0A
V_CE=10V, I_C=0.5A,f=1MHz
V_CB=10V,I_E=0,f=0.1MHz
I_B1=-I_B2=1.6A,T_P=25μs
Min.
—
—
400
8
6
—
—
—
4
—
—
Typ.
—
—
Max. Unit
1.0 ^mA
1.0 mA
—
—
V
—
40
—
30
— 3.0
V
— 1.5
— 1.6 V
—
— MHz
110 — pF
1.7 4.0 us
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