MJE13005 Datasheet, PDF (1/1 Pages) Motorola, Inc – 4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS

TIGER ELECTRONIC CO.,LTD
Product specification
Silicon NPN Power Transistor
MJE13005
DESCRIPTION
Silicon NPN, high power transistors in a plastic envelope, primarily for
use in high-speed power switching circuits.
Absolute Maximum Ratings ( Ta = 25 )
Parameter
Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
I_B
P_tot
T_j
T_stg
700 V
400 V
9
V
4.0 A
2.0 A
75 W
150 ^oC
-55~150 ^oC
TO-220
Electrical Characteristics ( Ta = 25 )
Parameter
Symbol
Test Conditions
Collector Cut-off Current
I_{CBO VCE=700V, IE=0}
Emitter Cut-off Current
I_EBO V_EB=9V, I_C=0
Collector-Emitter Sustaining Voltage
DC Current Gain
V_CEO
h_FE(1)
h_FE(2)
I_C=10mA, I_B=0
V_CE=5V, I_C=1.0A
V_CE=5V, I_C=1.0A
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
V_CE(sat)
V_BE(sat)
f_T
I_C=4.0A,I_B=1.0A
I_C=2.0A,I_B=0.5A
V_CE=10V, I_C=0.5A
Output Capacitance
Turn Off Time
C_ob V_CB=10V,I_E=0,f=0.1MHz
t_S
I_B1=-I_B2=1.6A,T_P=25 s
Min.
400
15
21
4
Typ.
65
2.5
Max. Unit
1.0 ^mA
1.0 mA
V
21
32
1.0 V
1.6 V
MHz
pF
4.0 us