MJE13003 Datasheet, PDF (1/1 Pages) Wing Shing Computer Components – NPN SILICON TRANSISTOR

TIGER ELECTRONIC CO.,LTD
Product specification
SWITCHMODE Series NPN Silicon Power Transistors
MJE13003
DESCRIPTION
These devices are designed for high–voltage, high–speed power switching inductive circuits
where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE such
as Switching Regulator s, Inverters, Motor Controls,applications Solenoid/Relay drivers and
Deflection circuits.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
Symbol Value Unit
Collector-Base Voltage
V_CBO
700
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
V_CEO
V_EBO
I_C
I_B
P_tot
T_j
T_stg
400 V
9
V
1.5 A
0.75 A
40 W
150 ^oC
-55~150 ^oC
TO-126
ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol
Test Conditions
Collector Cut-off Current
I_CEO V_CB=400V, I_E=0
Emitter Cut-off Current
I_EBO V_EB=9V, I_C=0
Collector-Emitter Sustaining Voltage
DC Current Gain
V_CEO
h_FE(1)
h_FE(2)
I_C=10mA, I_B=0
V_CE=2V, I_C=0.5A
V_CE=2V, I_C=1.0A
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Storage Time
V_CE(sat)
V_BE(sat)
f_T
T_S
I_C=0.5A,I_B=100mA
I_C=1A,I_B=250mA
I_C=1A,I_B=250mA
V_CE=10V,I_C=100mA
I_B1=I_B2=0.2A t_p=25us
Min.
400
8
5
4
Typ.
10
2
Max. Unit
1.0 mA
1.0 mA
V
40
25
0.5
V
1.0
1.2 V
MHz
4 us