MCR100-6_1 Datasheet, PDF (1/2 Pages) Tiger Electronic Co.,Ltd – SOT-89 Plastic-Encapsulate Transistors (SOT-89)

TIGER ELECTRONIC CO.,LTD
SOT-89 Plastic-Encapsulate Transistors
MCK 100- 6，- 8 Silicon Planar PNPN Thyristor
FEATURES
Current-I_GT : 200 μA
I_TRMS :
0.8 A
V_DRM : MCK100-6：400 V
MCK100-8：600 V
Operating and storage junction temperature range
T_J，T_stg : -55℃ to +150℃
SOT-89
1.KATHODE
2.ANODE
3.GATE
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN
On state voltage *
V_TM
I_TM=1A
Gate trigger voltage
V_GT
V_AK=7V
Peak Repetitive forward and reverse
V_DRM
blocking voltage
AND
I_DRM= 10 μA ,V_MAX=1010 V
400
MCK100-6
V_RRM
600
MCK100-8
Peak forward or reverse blocking
Current
I_DRM
I_RRM
V_AK= Rated
V_DRM or V_RRM
Holding current
I_H
I_HL= 20 mA , Av = 7 V
MAX
1.7
0.8
10
5
A2
5
15
Gate trigger current
A1
I_GT
A
V_AK=7V
15
30
30
80
UNIT
V
V
V
µA
mA
µA
µA
µA
B
80
200
µA
* Forward current applied for 1 ms maximum duration，duty cycle≤1%。