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MCK100-6 Datasheet, PDF (1/2 Pages) SemiWell Semiconductor – Sensitive Gate Silicon Controlled Rectifiers | |||
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TIGER ELECTRONIC CO.,LTD
SOT-89 Plastic-Encapsulate Transistors
MCK 100- 6ï¼- 8 Silicon Planar PNPN Thyristor
FEATURES
Current-IGT : 200 μA
ITRMS :
0.8 A
VDRM : MCK100-6ï¼400 V
MCK100-8ï¼600 V
Operating and storage junction temperature range
TJï¼Tstg : -55â to +150â
SOT-89
1.KATHODE
2.ANODE
3.GATE
ELECTRICAL CHARACTERISTICSï¼Tamb=25â unless otherwise specifiedï¼
Parameter
Symbol
Test conditions
MIN
On state voltage *
VTM
ITM=1A
Gate trigger voltage
VGT
VAK=7V
Peak Repetitive forward and reverse
VDRM
blocking voltage
AND
IDRM= 10 μA ,VMAX=1010 V
400
MCK100-6
VRRM
600
MCK100-8
Peak forward or reverse blocking
Current
IDRM
IRRM
VAK= Rated
VDRM or VRRM
Holding current
IH
IHL= 20 mA , Av = 7 V
MAX
1.7
0.8
10
5
A2
5
15
Gate trigger current
A1
IGT
A
VAK=7V
15
30
30
80
UNIT
V
V
V
µA
mA
µA
µA
µA
B
80
200
µA
* Forward current applied for 1 ms maximum durationï¼duty cycleâ¤1%ã
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