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MBRF20100CT Datasheet, PDF (1/2 Pages) Motorola, Inc – SWITCHMODE™ Schottky Power Rectifirers
TIGER ELECTRONIC CO.,LTD
TO-220F Plastic-Encapsulate Diodes
MBRF20100CT, 150CT, 200CT
SCHOTTKY BARRIER RECTIFIER
TO-220F
FEATURES
 Schottky Barrier Chip
 Guard Ring Die Construction for Transient Protection
 Low Power Loss,High Efficiency
 High Surge Capability
 High Current Capability and Low Forward Voltage Drop
 For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
PD
RΘJA
Tj
Tstg
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Non-Repetitive peak forward surge current
8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
MBRF20100CT
100
70
Value
MBRF20150CT
150
105
20
150
2
50
125
-55~+150
MBRF20200CT
200
140
Unit
V
V
A
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Device
Test conditions
Reverse voltage
Reverse current
Forward voltage
Typical total capacitance
V(BR)
IR
VF
Ctot
MBRF20100CT
MBRF20150CT
MBRF20200CT
MBRF20100CT
MBRF20150CT
MBRF20200CT
MBRF20100CT
MBRF20150CT
MBRF20200CT
MBRF20100CT- 20200CT
IR=1mA
VR=100V
VR=150V
VR=200V
IF=10A
VR=5V,f=1MHz
Min Typ
100
150
200
1000
Max Unit
V
0.15
0.1 mA
0.1
0.85
0.9 V
0.9
pF
B,Apr,2012