KTC3400 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (DIFFERENTIAL AMP.)

TIGER ELECTRONIC CO.,LTD
1. EMITTER
2. COLLECTOR
3. BASE
KTC3400(NPN)
TO-92 Transistors
Differential Amplifier Application
Features
● Matched Prais for Differential Amplifier.
● High Breakdown Voltage:Vceo＝120V（Min）
● Complementary to KTA2400.
Absolute Maximum Rating (Ta=25℃)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Value
Unit
BVCBO
120
V
BVCEO
120
V
BVEBO
5
V
IC
100
mA
PC
625
mW
Tj
150
℃
Tstg
-55～150
℃
Electrical Characteristics (Ta=25℃)
Parameter
Symbol
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
base -emitter saturation voltage
Transition frequency
BVCBO I_C = 100μA，I_E = 0
BVCEO I_C = 1mA，I_B = 0
BVEBO I_E = 100μA，I_C = 0
ICBO V_CB = 120V，I_E = 0
ICEO V_CE = 120V，I_B = 0
IEBO V_EB = 5V，I_C = 0
hFE V_CE=6V，I_B=2mA
VCESAT I_C = 10mA，I_B = 1mA
VBESAT I_C = 10mA，I_B = 1mA
fT V_CE = 6V，I_B = 1mA
Value
Unit
Min Typ Max
120
V
120
V
5
V
100 nA
1 μA
100 nA
200
400
0.3 V
1.0 V
100
MHz
hFE Classification
Classification
GA
hFE
200-220
GB
220-250
GC
250-280
GD
280-310
GE
310-340
GF
340-370
GG
370-400