KTC3202 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
KTC3202 TRANSISTOR (NPN)
FEATURES
General Purpose Application Switching Application
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
35
30
5
500
625
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
Parameter
Symbol Test conditions
Min
Typ
Collector-BASE breakdown voltage
V_(BR)CBO I_C = 0.1mA, I_B=0
35
Collector-emitter breakdown voltage
V_(BR)CEO I_C = 1mA, I_B=0
30
Emitter-base breakdown voltage
V_(BR)EBO I_E= 0.1mA, I_C=0
5
Collector cut-off current
I_CBO
V_CB= 35V, I_E=0
Emitter cut-off current
I_EBO
V_EB= 5V, I_C=0
DC current gain
h_FE(1) V_CE= 1V, I_C= 100mA
70
h_FE(2) V_CE= 6V, I_C= 400mA
25
Collector-emitter saturation voltage
V_CE(sat) I_C=100mA, I_B= 10mA
Base-Emitter Saturation Voltage
V_BE
V_CE=1V, I_C= 100mA
Transition frequency
f_T
V_CE= 6V, I_C= 20mA
300
Collector Output Capacitance
C_ob
V_CB= 6V, I_E= 0,f=1 MHz
7.0
Max
0.1
0.1
400
0.25
1.0
Unit
V
V
V
μA
μA
V
V
MHz
pF
CLASSIFICATION OF h_FE
Rank
Range h_FE(1)
Range h_FE(2)
O
Y
GR
70-140
120-240
25
40
A,June,2011