KTA2400 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (DIFFERENTIAL AMP.)

TIGER ELECTRONIC CO.,LTD
1. EMITTER
2. COLLECTOR
3. BASE
KTA2400(NPN)
TO-92 Transistors
Differential Amplifier Application
Features
● Matched Prais for Differential Amplifier.
● High Breakdown Voltage:Vceo＝-120V（Min）
● Complementary to KTC3400.
Absolute Maximum Rating (Ta=25℃)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Value
Unit
BVCBO
-120
V
BVCEO
-120
V
BVEBO
-5
V
IC
-100
mA
PC
625
mW
Tj
150
℃
Tstg
-55～150
℃
Electrical Characteristics (Ta=25℃)
Parameter
Symbol
Conditions
Value
Unit
Min Typ Max
Collector-base breakdown voltage
BVCBO I_C = -100μA，I_E = 0
-120
V
Collector-emitter breakdown voltage BVCEO I_C = -1mA，I_B = 0
-120
V
Emitter-base breakdown voltage
BVEBO I_E = -100μA，I_C = 0
-5
V
Collector cut-off current
ICBO V_CB = -120V，I_E = 0
-100 nA
Collector cut-off current
ICEO V_CE = -120V，I_B = 0
1 μA
Emitter cut-off current
IEBO V_EB = -5V，I_C = 0
-100 nA
DC current gain
hFE V_CE= -6V，I_B= -2mA
200
400
Collector-emitter saturation voltage
VCESAT I_C = -10mA，I_B = -1mA
-0.3 V
base -emitter saturation voltage
VBESAT I_C = -10mA，I_B = -1mA
-1.0 V
Transition frequency
fT V_CE = -6V，I_B = -1mA
100
MHz
hFE Classification
Classification
GA
hFE
200-220
GB
220-250
GC
250-280
GD
280-310
GE
310-340
GF
GG
340-370 370-400