KTA1271 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT)

TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
KTA1271 TRANSISTOR (PNP)
FEATURES
z High DC Current Gain
z Complementary to KTC3203
TO – 92
1.EMITTER
2.COLLECTOR
3.BASE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbo
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-35
-30
-5
-0.8
0.625
200
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector Output Capacitance
Symbol
V_(BR)CBO
V_{(BR) CEO}
V_(BR)EBO
I_CBO
I_CEO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE
f_T
Cob
Test conditions
I_C= -0.1mA ,I_E=0
I_C=-10mA,I_B=0
I_E=-0.1mA,I_C=0
V_CB=-35V,I_E=0
V_CE=-25V,I_B=0
V_EB=-5V,I_C=0
V_CE=-1V, I_C=-100mA
V_CE=-1V, I_C=-700mA
I_C=-500mA,I_B=-20mA
V_CE=-1V, I_C=-10mA
V_CE=-5V,I_C=-10mA
VCB=-10V, IE=0, f=1MHz
CLASSIFICATION OF h_FE(1)
RANK
RANGE
O
100-200
Min Typ Max Unit
-35
V
-30
V
-5
V
-0.1 μA
-0.2 μA
-0.1 μA
100
320
35
-0.7 V
-0.8 V
120
MHz
19
pF
Y
160-320
A,Dec,2010