KTA1268 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (LOW NOISE AMPLIFIER, HIGH VOLTAGE)

TIGER ELECTRONIC CO.,LTD
KTA1268 PNP
Plastic-Encapsulate Transistors
Low Noise Amplifier Application
High Voltage Application
Features ● High Voltage:Vceo＝-120V（Min）
● High DC current gain h_FE = 200~700.
Absolute Maximum Rating (Ta=25℃)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
BVCBO
-120
V
BVCEO
-120
V
BVEBO
-5
V
IC
-100
mA
PC
625
mW
Tj
150
℃
Tstg
-55～150
℃
Electrical Characteristics (Ta=25℃)
Parameter
Symbol
Conditions
Collector-emitter breakdown voltage BVCEO I_C = -1mA，I_B = 0
Value
Unit
Min Typ Max
-120
V
Collector cut-off current
ICBO V_CB = -120V，I_E = 0
-100 nA
Emitter cut-off current
IEBO V_EB = -5V，I_C = 0
-100 nA
DC current gain
hFE V_CE= -6V，I_C= -2mA
200
700
Collector-emitter saturation voltage
VCESAT I_C = -10mA，I_B = -1mA
-0.3 V
base -emitter saturation voltage
VBESAT I_C = -10mA，I_B = -1mA
-1.0 V
Transition frequency
fT V_CE = -6V，I_B = -1mA
100
MHz
hFE Classification
Classification
hFE
GR
200-400
BL
350-700