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| KTA1266 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING) | |||
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TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
KTA1266 TRANSISTOR (PNP)
TO-92
FEATURES
z Excellent hFE Linearity
z Low Noise
z Complementary to KTC3198
MAXIMUM RATINGS (Ta=25 â unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous -0.15
A
PC
Collector Power Dissipation
625
mW
Tj
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC =-100μA, IE=0
-50
Collector-emitter breakdown voltage
V(BR)CEO IC=-1mA, IB=0
-50
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA, IC=0
-5
Collector cut-off current
ICBO
VCB=-50V, IE=0
Emitter cut-off current
IEBO
VEB=-5V, IC=0
DC current gain
hFE(1) VCE=-6V, IC=-2mA
70
hFE(2) VCE=-6V, IC=-150mA
25
Collector-emitter saturation voltage
VCE(sat) IC=-100mA, IB=-10mA
Base-emitter saturation voltage
VBE(sat) IC=-100mA, IB=-10mA
Transition frequency
fT
VCE=-10V, IC=-1mA
80
Collector output capacitance
Noise figure
CLASSIFICATION OF hFE(1)
Cob
VCB=-10V, IE=0, f=1MHz
VCE=-6V, Ic=-0.1mA,
NF
f=1KHZ, Rg=10Kâ¦
Rank
O
Y
Range
70-140
120-240
Marking
Typ Max Unit
V
V
V
-0.1 μA
-0.1 μA
400
-0.3
V
-1.1
V
MHz
7
pF
10
dB
GR
200-400
A,June,2011
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