IRFZ44N Datasheet, PDF (1/1 Pages) NXP Semiconductors – N-channel enhancement mode TrenchMOS transistor

TIGER ELECTRONIC CO.,LTD
N-Channel Power MOSFET
Product specification
IRFZ44N
DESCRIPTION
Process has specifically been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary switch in advanced
highefficiency, high-frequency isolated DC-DC converters for Telecom and
Computer applications. It is also intended for any applications with low gate
drive requirements.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
l
Value Unit
Drain-Source Voltage
V_DSS
55
V
Drain Current - Continuous
Drain Current - Pulsed
Gate-Source Voltage
Power Dissipation
Max. Operating Junction Temperature
Storage Temperature
I_D
I_DM
V_GSS
P_D
T_j
T_stg
49
A
160 A
±20 V
94 W
150 ^oC
-55~150 ^oC
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol Test Conditions
Drain-Source Breakdown Voltage
BV_DSS V_GS = 0V, I_D =250_μA
Zero Gate Voltage Drain Current
I_DSS V_DS =55V, V_GS =0V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
I_GSSF
I_GSSR
V_GS(th)
V_GS =20V, V_DS =0V
V_GS = -20V, V_DS =0V
V_DS = V_GS , I_D =250μA
Static Drain-Source On-Resistance
R_DS(on) V_GS = 10 V, I_D = 25 A
Drain-Source Diode Forward Voltage
V_SD V_GS = 0 V, I_S = 25 A
Min.
55
—
—
—
2.0
—
—
Typ.
—
—
—
—
3.0
—
—
Max. Unit
—
V
10 uA
100 nA
-100 nA
4.0 V
0.0175 ^W
1.3 V