IRFS640B Datasheet, PDF (1/1 Pages) Tiger Electronic Co.,Ltd – 200V N-Channel MOSFET

TIGER ELECTRONIC CO.,LTD
Product specification
200V N-Channel MOSFET
IRFS640B
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s
proprietary,planar, DMOS technology.
This advanced technology has been minimize on-state resistance, provide superior switchingespecially tailored
to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in
the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power
supplies, power factor correction and electronic lamp ballasts based on half bridge.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
Drain-Source Voltage
Drain Current - Continuous
Drain Current - Pulsed
Gate-Source Voltage
Power Dissipation
Max. Operating Junction Temperature
Storage Temperature
Symbol
V_DSS
I_D
I_DM
V_GSS
P_D
T_j
T_stg
Value
Unit
200
V
18
A
72
A
30
V
125
W
150
o_C
-55~150
o_C
ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol Test Conditions
Drain-Source Breakdown Voltage
BV_DSS V_GS = 0V, I_D =250 A
Zero Gate Voltage Drain Current
I_DSS V_DS =200V, V_GS =0V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
I_GSSF
I_GSSR
V_GS(th)
V_GS =30V, V_DS =0V
V_GS = -30V, V_DS =0V
V_DS = V_GS , I_D =250 A
Static Drain-Source On-Resistance
R_DS(on) V_GS = 10 V, I_D = 10.0 A
Drain-Source Diode Forward Voltage
V_SD V_GS = 0 V, I_S = 18.0 A
Min.
200
2.0
Typ.
0.14
Max. Unit
V
10 uA
100 uA
-100 uA
4.0 V
0.18 ^W
2.0 V