FQPF50N06 Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – 60V N-Channel MOSFET

TIGER ELECTRONIC CO.,LTD
60V N-Channel MOSFET
Product specification
FQPF50N06
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s
proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well suited for low voltage applications such as
automotive, DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
l
Value Unit
Drain-Source Voltage
V_DSS
60
V
Drain Current - Continuous
Drain Current - Pulsed
Gate-Source Voltage
Power Dissipation
Max. Operating Junction Temperature
Storage Temperature
I_D
I_DM
V_GSS
P_D
T_j
T_stg
50
A
200 A
±25 V
120 W
150 ^oC
-55~150 ^oC
TO-220F
ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol Test Conditions
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV_DSS
I_DSS
V_GS = 0V, I_D =250μA
V_DS =60V, V_GS =0V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
I_GSSF
I_GSSR
V_GS(th)
R_DS(on)
V_GS =25V, V_DS =0V
V_GS = -25V, V_DS =0V
V_DS = V_GS , I_D =250μA
V_GS = 10 V, I_D = 25 A
Forward Transconductance
Drain-Source Diode Forward Voltage
g_FS V_DS = 25 V, I_D = 25 A
V_SD V_GS = 0 V, I_S = 50 A
Min.
60
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—
—
2.0
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Typ.
—
—
—
—
—
18
22
—
Max. Unit
—
V
1.0 uA
100 nA
-100 nA
4.0 V
22 mΩ
—
S
1.5 V