FQPF4N60 Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

TIGER ELECTRONIC CO.,LTD
600V N-Channel MOSFET
Product specification
FQPF4N60
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using proprietary,planar,
DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency switch mode power supplies.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
l
Value Unit
Drain-Source Voltage
V_DSS
600
V
Drain Current - Continuous
Drain Current - Pulsed
Gate-Source Voltage
Power Dissipation
Max. Operating Junction Temperature
Storage Temperature
I_D
I_DM
V_GSS
P_D
T_j
T_stg
4.4 A
17.6 A
±30 V
106 W
150 ^oC
-55~150 ^oC
TO-220F
ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol Test Conditions
Drain-Source Breakdown Voltage
BV_DSS V_GS = 0V, I_D =250_μA
Zero Gate Voltage Drain Current
I_DSS V_DS =600V, V_GS =0V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
I_GSSF
I_GSSR
V_GS(th)
V_GS =30V, V_DS =0V
V_GS = -30V, V_DS =0V
V_DS = V_GS , I_D =250μA
Static Drain-Source On-Resistance
R_DS(on) V_GS = 10 V, I_D = 2.2 A
Drain-Source Diode Forward Voltage
V_SD V_GS = 0 V, I_S = 4.4 A
Min.
600
—
—
—
3.0
—
—
Typ.
—
—
—
—
—
1.77
—
Max. Unit
—V
10 uA
100 nA
-100 nA
5.0 V
2.2 ^W
1.4 V