FQD5N50 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

TIGER ELECTRONIC CO.,LTD
500V N-Channel MOSFET
DESCRIPTION
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
Symbol Value Unit
Drain-Source Voltage
VDSS
500 V
Drain Current - Continuous
ID
3.5 A
Drain Current - Pulsed
Gate-Source Voltage
IDM
14 A
VGSS
±30
V
Power Dissipation
Max. Operating Junction Temperature
Storage Temperature
PD
50 W
Tj
150 ^oC
Tstg -55~150 ^oC
TO-252
FQD5N50
ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol Test Conditions
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID =250μA
Zero Gate Voltage Drain Current
IDSS VDS =500V, VGS =0V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
IGSSF
IGSSR
VGS =30V, VDS =0V
VGS = -30V, VDS =0V
Gate Threshold Voltage
VGS(th) VDS = VGS , ID =250μA
Static Drain-Source On-Resistance
RDS(on) VGS = 10 V, ID = 1.75 A
Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 3.5 A
Min.
500
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3.0
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Typ.
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Max. Unit
—V
1.0 uA
100 nA
-100 nA
5.0 V
1.8 W
1.4 V