DB3-DB4 Datasheet, PDF (1/2 Pages) Tiger Electronic Co.,Ltd – Silicon Bidirectional Diacs

TIGER ELECTRONIC CO.,LTD
DB3/DB4
Silicon Bidirectional Diacs
VOLTAGE RANGE: 28-45 V
DO-35
Features
The three layer,two termnal,axial lead,hermetically
1111sealed diacs are des igned s pecifically for triggering
1111thyristors .They demonstrate low breakover current at
1111breakover voltage as they withs tand peak pulse
1111current,The breakover s ymmetry is within three
1111volts(DB3,DB4). These diacs are intended for use in
CCCthyrisitors phase control,circuits for lamp dimming,
FFFI universal motor speed control,and heat control.
ABSOLUTE RATINGS
Parameters
Symbols
Dimensions in inches and (millimeters)
DB3,DB4
UNITS
Power dissipation on printed
T_A=50^oC circuit (L=10mm)
Pc
Repetitive peak on-state
current
tp=20 S
f=120Hz
I_TRM
Operating junction temperature
T_J
Storage temperature
T_STG
ELECTRICAL CHARACTERISTICS
150.0
2.0
-40--- +125
-40--- +125
Parameters
Test Conditions
Breakover voltage (NOTE 1)
Min
C=22nf(NOTE 2)
V_BO
See FIG.1
Typ
Max
Breakover voltage symmetry
Dynamic breakover voltage (NOTE 1)
I+V_BO I-
I-V_BOI
I± VI
C=22nf(NOTE 2)
See FIG.1
Max
I=(I_BO to I_F=10mA)
See FIG.1
Min
Output voltage (NOTE 1)
V_o
See FIG.2
Min
Breakover current (NOTE 1)
Rise time (NOTE 1)
Leakage current (NOTE 1)
I_BO
C=22nf(NOTE 2)
Max
t_r
See FIG.3
Typ
I_R
V_R=0.5 V_BO
See FIG.1
Max
NOTE: 1.Electrical characteristics applicable in both forw ard and reverse dirctions.
2.Connected in parallel w ith the devices
DB3
DB4
28
35
32
40
36
45
±3.0
5.0
5.0
100.0
1.5
10.0
mW
A
o_C
o_C
UNITS
V
V
V
V
A
S
A