BUV48A Datasheet, PDF (1/1 Pages) STMicroelectronics – High voltage fast switching NPN power transistor

TIGER ELECTRONIC CO.,LTD
NPN Silicon High Power Ttransistors
Product specification
BUV48A
DESCRIPTION
The BUV48A transistors are designed for high-voltage, high-speed, power
switching in inductive circuits where fall time is critical. They are particularly suited for
line-operated switchmode applications such as:
◆ Switching Regulators
◆ Inverters
◆ Solenoid and Relay Drivers
◆ Motor Controls
◆ Deflection Circuits
ABSOLUTE MAXIMUM RATINGS ( Ta = 25℃ )
Parameter
Symbol Value Unit
Collector-Base Voltage
V_CBO
1000 V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
V_CEO
V_EBO
I_C
I_B
P_tot
T_j
T_stg
450 V
7.0 V
15 A
5.0 A
150 W
150 ℃
-55~150 ℃
TO-3PN
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ )
Parameter
Symbol Test Conditions
Collector Cut-off Current
I_CES V_CE=1000V, I_E=0
Emitter Cut-off Current
I_EBO V_EB=5.0V, I_C=0
Collector-Emitter Sustaining Voltage
DC Current Gain
V_CEO
h_FE
I_C=100mA, I_B=0
V_CE=5V, I_C=8.0A
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V_CE(sat)
V_BE(sat)
I_C=8.0A,I_B=1.6A
I_C=12A,I_B=2.4A
I_C=8.0A,I_B=1.6A
Storage Time
T_S V_CC=300V, T_p = 30 us
Min.
—
—
450
8
—
—
—
—
Typ.
—
—
—
—
—
—
—
—
Max. Unit
0.5 mA
0.1 mA
—
V
—
1.5
V
5.0
1.6 V
2.0 us