BUL128 Datasheet, PDF (1/1 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

TIGER ELECTRONIC CO.,LTD
Product specification
HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR
BUL128
■ NPN TRANSISTOR
■ HIGH VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
APPLICATIONS
■ _{ELECTRONIC BALLASTS FOR}
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage
capability. It uses a Cellular Emitter structure
with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
ABSOLUTE MAXIMUM RATINGS
Parameter
ol
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
V_CEO
V_EBO
I_C
I_B
P_tot
T_j
T_stg
Value Unit
700
V
400
V
9
V
4.0
A
2.0
A
70
W
150
o_C
-65~150 ^oC
TO-220AB
(Tcase = 25 ℃ unless otherwise specified)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
Emitter-Base Voltage (I_C=0)
DC Current Gain
Symbol Test Conditions
I_{CES VCE=700V, IE=0}
I_EBO V_EB=9V, I_C=0
V_CEO
V_EBO
I_C=100mA, I_B=0
I_E=10mA
h_FE(1)
h_FE(2)
V_CE=5V, I_C=2.0A
V_CE=5V, I_C=10mA
Min.
—
—
400
9
14
10
Typ.
—
—
—
—
—
—
Collector-Emitter Saturation Voltage
V_CE(sat) ^{IC=1.0A,IB=0.2A}
I_C =4.0A, I_B=1.0A
—
—
—
—
Base-Emitter Saturation Voltage
Storage Time
V_BE(sat)
T_S
I_C=1.0A,I_B=0.2A
I_C =2.5A,I_B=0.5A
I_C=2.5A I_B1=-I_B2=0.5A
—
—
—
—
1.5
—
Max. Unit
0.1 ^mA
0.1 mA
—
V
—
V
40
—
1.0
V
1.5
1.2
V
1.3
3.0 us