BU806 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(8.0A,150-200V,60W)

TIGER ELECTRONIC CO.,LTD
MEDIUM Voltage & Fast Switching DarlingtonTransistor
Product specification
BU806
DESCRIPTION
The devices are silicon Epitaxial Planar NPN power transistors in Darlington
configuration with integrated base-emitter speed-up diode, mounted
in TO-220 plastic package.
They can be used in horizontal output stages of 110 ^oCRT video displays.
Absolute Maximum Ratings ( Ta = 25℃ )
Parameter
l
Value Unit
Collector-Base Voltage
V_CBO
400
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
V_CEO
V_EBO
I_C
I_B
P_tot
T_j
T_stg
200 V
6
V
8.0 A
2.0 A
60 W
150 ^oC
-55~150 ^oC
TO-220
Electrical Characteristics ( Ta = 25℃ )
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Damper Diode Forward Voltage
Storage Time
Symbol Test Conditions
I_{CES VCE=400V, VBEO=0}
I_EBO V_EB=6V, I_C=0
V_CEO I_C=100mA, I_B=0
h_FE(1) V_CE=5V, I_C=5.0A
V_CE(sat) I_C=5.0A,I_B=50mA
V_BE(sat) I_C=5.0A,I_B=50mA
V_F I_F=4.0A
T_S I_C=5A, I_B=0.5A
Min.
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200
200
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Typ.
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0.55
Max. Unit
100 ^uA
3.5 mA
—V
—
1.5 V
2.4 V
2
V
— us