BU406 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(7A,150-200V,60W)

TIGER ELECTRONIC CO.,LTD
Product specification
NPN Epitaxial Silicon Transistor
BU406
High Voltage Switching
* Use In Horizontal Deflection Output Stage
Absolute Maximum Ratings ( Ta = 25 )
Parameter
Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
I_B
P_tot
T_j
T_stg
400 V
200 V
6
V
7.0 A
4.0 A
60 W
150 ^oC
-55~150 ^oC
TO-220
Electrical Characteristics ( Ta = 25 )
Parameter
Symbol
Test Conditions
Collector Cut-off Current
I_CES ^{VCE=400V, IE=0}
V_CE=250V, I_E=0
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Turn Off Time
I_EBO
V_CEO
h_FE(1)
V_CE(sat)
V_BE(sat)
f_T
t_OFF
V_EB=6V, I_C=0
I_C=50mA, I_B=0
V_CE=4V, I_C=1.0A
I_C=5.0A,I_B=0.5A
I_C=5.0A,I_B=0.5A
V_CE=10V, I_C=0.5A
I_C=5A, I_B=0.5A
Min.
200
10
10
Typ. Max. Unit
5.0
mA
0.1
1.0 mA
V
1.0 V
1.2 V
MHz
0.75 us