BU2508DF Datasheet, PDF (1/1 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

TIGER ELECTRONIC CO.,LTD
Silicon Diffused Power Transistor
Product specification
BU2508DF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor
with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal
deflection circuits of colour television receivers. Features exceptional tolerance to base drive
and collector current load variations resulting in a very low worst case dissipation.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol ^{Value Unit}
Collector-Base Voltage
VCBO
1500 V
Collector-Emitter Voltage
VCEO
700
V
Emitter-Base Voltage
Collector Current
VEBO
IC
6
V
8.0
A
Base Current
IB
3.5
A
Total Dissipation at
Ptot
Max. Operating Junction Temperature
Tj
45
W
150
o_C
Storage Temperature
Tstg
-65~150 ^oC
TOP-3Fa
ELECTRICAL CHARACTERISTICS ^{(Tcase = 25 ℃ unless otherwise specified)}
Parameter
Symbol Test Conditions
Min. Typ.
Collector Cut-off Current
ICES V_CB=1500V, I_E=0
—
—
Emitter Cut-off Current
IEBO VEB=7.5V, IC=0
— 227
Collector-Emitter Sustaining Voltage VCEO IC=100mA, IB=0
700 —
DC Current Gain
hFE(1)
hFE(2)
VCE=5.0V, IC=1.0A
VCE=1.0V, IC=4.5A
—
13
4
—
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Diode forward voltage
VCE(sat)
VBE(sat)
VF
IC=4.5A,IB=1.12A
IC=4.5A,IB=1.7A
IF=4.5A
—
—
—
—
—
1.6
Max. Unit
1.0 ^mA
— mA
—
V
—
10
1.0 ^V
1.1 ^V
2.0 V