BT169D Datasheet, PDF (1/1 Pages) Tiger Electronic Co.,Ltd – Thyristors logic level

TIGER ELECTRONIC CO.,LTD
Product specification
Thyristors logic level
BT169 series
GENERAL DESCRIPTION
Passivated, sensitive gate thyristors ina plastic envelope, intended
foruse in general purpose switching and phase control applications.
These devices are intended to be interfaced directly to
microcontrollers, logic integrated circuits and other low power gate
trigger circuits.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
Symbol
Typ
BT169D BT169G
VV_DRRRMM
400 600
I_T(AV)
0.5
I_T(RMS)
0.8
I_TSM
8.0
Unit
V
A
A
A
Max. Operating Junction
Temperature
T_j
110
o_C
Storage Temperature
T_stg
-45~150
o_C
TO-92
ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol
Repetitive peak off-state voltage
s
VV_DRRRMM
Test Conditions
Min
Typ
Max Unit
BT169D BT169G
— 400 600 — V
Average on-state current
I_T(AV) half sine wave; T_mb< 103 ^oC —
0.5
—A
RMS on-state current
I_T(RMS) all conduction angles
—
0.8
—A
On-state voltage
V_T I_T=1.0 A
—
1.20
1.35 V
Holding current
I_H V_D =12 V; I_GT = 0.5 mA
—
0.5
5 mA
Latching current
I_L V_D =12 V; I_GT = 0.5 mA
—
0.6
6 mA
Gate trigger current
I_GT V_D =12 V; I_T = 10 mA
—
15
200 uA
Gate trigger voltage
V_GT V_D =12 V; I_T = 10 mA
—
0.5
0.8 V