BT151-650R Datasheet, PDF (1/1 Pages) NXP Semiconductors – SCR, 12 A, 15mA, 650 V, SOT78

TIGER ELECTRONIC CO.,LTD
Product specification
Triacs sensitive gate
BT151-650R
GENERAL DESCRIPTION
Glass passivated thyristors in a plastic envelope, intended
for use in applications requiring high bidirectional blocking
voltage capability and high thermal cycling performance.
Typical applications include motor control, industrial and
domestic lighting, heating and static switching.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
Symbol Typ Unit
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
Max. Operating Junction
Temperature
Storage Temperature
V_DRM
V_RRM
650
V
I_T(AV)
7.5
A
I_T(RMS)
12
A
I_TSM
120
A
T_j
110
o_C
T_stg
-45~150 ^oC
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Repetitive peak off-state voltages
V_DRM
V_RRM
— 650 — V
Average on-state current
I_T(AV) half sine wave; T_mb< 103 ^oC
—
7.5
—A
RMS on-state current
On-state voltage
Holding current
Latching current
Gate trigger current
Gate trigger voltage
I_T(RMS)
V_T
I_H
I_L
I_GT
V_GT
all conduction angles
I_T=20A
V_D =12 V; I_GT = 0.1 A
V_D =12 V; I_GT = 0.1 A
V_D =12 V; I_T = 0.1 A
V_D =12 V; I_T = 0.1 A
—
12
—A
—
1.4 1.75 V
—
7.5
30 mA
—
10
45 ^mA
—
3
30 ^mA
—
0.6 1.5 ^V