BT138-600 Datasheet, PDF (1/1 Pages) SemiWell Semiconductor – Bi-Directional Triode Thyristor

TIGER ELECTRONIC CO.,LTD
Triacs sensitive gate
Product specification
BT138-600
GENERAL DESCRIPTION
Passivated, sensitive gate triacs in a plastic
envelope, intended for use in general purpose
bidirectional switching and phase control
applications, where high sensitivity is required
in all four quadrants.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25℃ )
Parameter
Symbol Typ Unit
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
Max. Operating Junction
Temperature
Storage Temperature
V_DRM
V_RRM
600
V
I_T(RMS)
12
A
I_TSM
105
A
T_j
110
℃
T_stg
-45~150 ℃
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ )
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Repetitive peak off-state voltages
V_DRM
V_RRM
— 600 — V
RMS on-state current
On-state voltage
Holding current
T2+G+
Gate trigger
current
T2+G-
T2-G-
I_T(RMS) full sine wave; T_mb ≤107 ℃
—
V_T I_T=15A
—
I_H V_D = 12 V; I_GT = 0.1 A
—
—
—
I_GT V_D = 12 V; I_T = 0.1 A
—
12
—A
1.4 1.7 V
—
50 mA
—
25
—
25
mA
—
25
T2-G+
T2+G+
—
—
50
—
3.0
35
Latching
current
T2+G-
T2-G-
T2-G+
Gate trigger voltage
I_L
V_D = 12 V; I_GT = 0.1 A
V_GT V_D = 12 V; I_T = 0.1 A
—
10
40
mA
—
2.5
35
—
4.0
40
—
0.7 1.5 V