BT137-600 Datasheet, PDF (1/1 Pages) SemiWell Semiconductor – Bi-Directional Triode Thyristor

TIGER ELECTRONIC CO.,LTD
BT137-600
GENERAL DESCRIPTION
Passivated, sensitive gate triacs in a plastic
envelope, intended for use in general purpose
bidirectional switching and phase control
applications, where high sensitivity is required
in all four quadrants.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
Symbol Typ Unit
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
Max. Operating Junction
Temperature
Storage Temperature
V_DRM
V_RRM
600
V
I_T(RMS)
8.0
A
I_TSM
65
A
T_j
110
o_C
T_stg
-45~150 ^oC
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Repetitive peak off-state voltages
RMS on-state current
On-state voltage
Holding current
T2+G+
Gate trigger
current
T2+G-
T2-G-
T2-G+
T2+G+
Latching
current
T2+G-
T2-G-
T2-G+
Gate trigger voltage
V_DRM
V_RRM
I_T(RMS)
V_T
I_H
full sine wave; T_mb 107 ^oC
I_T=10A
V_D = 12 V; I_GT = 0.1 A
I_GT V_D = 12 V; I_T = 0.1 A
I_L
V_D = 12 V; I_GT = 0.1 A
V_GT V_D = 12 V; I_T = 0.1 A
600
V
8
A
1.3 1.65 V
5
20 mA
5
25
8
25
mA
11
25
30
70
7
30
16
45
mA
5
30
7
45
0.7 1.5 V