BDX53F Datasheet, PDF (1/1 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

TIGER ELECTRONIC CO.,LTD
Complementary Silicon Power Darlington Ttransistors
Product specification
BDX53F / BDX54F
DESCRIPTION
The BDX53F are silicon Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in Jedec TO-220 plastic package.
They are intented for use in hammer drivers, audio amplifiers and
other medium power linear and switching applications.
The complementary PNP types are BDX54F respectively.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
Symbol Value Unit
Collector-Base Voltage
VCBO
160 V
Collector-Emitter Voltage
VCEO
160 V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
8.0 A
Base Current
IB
0.2 A
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
Ptot
60 W
Tj
150 ^oC
Tstg -55~150 ^oC
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol Test Conditions
Collector Cut-off Current
ICBO VCB=160V, IE=0
Collector Cut-off Current
ICEO VCE=80V, IB=0
Emitter Cut-off Current
IEBO VEB=5.0V, IC=0
Collector-Emitter Sustaining Voltage
DC Current Gain
VCEO
hFE
IC=50mA, IB=0
VCE=5V, IC=2.0A
Collector-Emitter Saturation Voltage VCE(sat) IC=2.0A,IB=10mA
Base-Emitter Saturation Voltage
VBE(sat) IC=2.0A,IB=10mA
Parallel-diode Forward Voltage
VF IF=2A
Min.
—
—
—
160
500
—
—
—
Typ.
—
—
—
—
—
—
—
—
Max. Unit
0.2 mA
0.5 mA
2.0 mA
—
V
—
2.0 V
2.5 V
2.5 V