BDW94C Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor

TIGER ELECTRONIC CO.,LTD
Product specification
Complementary Power Darlington TR
BDW93C / BDW94C
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
Symbol ^{Value Unit}
Collector-Base Voltage
V_CBO
100
V
Collector-Emitter Voltage
Collector Current
Base Current
V_CEO
100
V
I_C
12
A
I_B
0.2 A
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
P_tot
80 W
T_j
150 ^oC
T_stg -55~150 ^oC
A1 A2 G
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol
Test Conditions
Collector Cut-off Current
Collector Cut-off Current
I_CBO
I_CEO
V_CE=100V, I_E=0
V_CE=100V, I_B=0
Emitter Cut-off Current
I_EBO V_EB=5V, I_C=0
Collector-Emitter Sustaining Voltage V_CEO I_C=100mA, I_B=0
DC Current Gain
V_CE=3V, I_C=3A
h_{FE VCE=3V, IC=5A}
V_CE=3V, I_C=10A
Collector-Emitter Saturation Voltage
V_CE(sat) ^{IC=5A, IB=20mA}
I_C=10A, I_B=100mA
Base-Emitter Saturation Voltage
V_BE(sat) ^{IC=5A, IB=20mA}
I_C=10A, I_B=100mA
Parallel Diode Forward Voltage
V_F
I_F=5A
I_F=10A
Min.
100
1000
750
100
Typ. Max. Unit
0.1 mA
1.0 mA
2.0 mA
V
20000
20000
20000
2.0 V
3.0 V
2.5 V
4.0 V
1.3
V
1.8
V