BD681 Datasheet, PDF (1/1 Pages) Tiger Electronic Co.,Ltd – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

TIGER ELECTRONIC CO.,LTD
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Product specification
BD681/BD682
DESCRIPTION
The BD681, are silicon epitaxial-base NPN power
transistors in monolithic Darlington configuration
mounted in Jedec TO-126 plastic package.
They are intended for use in medium power linar
and switching applications
The complementary PNP types are BD682,
respectively.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
Symbol Value Unit
Collector-Base Voltage
VCBO
100 V
Collector-Emitter Voltage
VCEO
100 V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
4.0 A
Base Current
IB
0.1 A
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
Ptot
40 W
Tj
150 ^oC
Tstg -55~150 ^oC
ELECTRRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol Test Conditions
Collector Cut-off Current
ICEO VCE=100V, IB=0
Collector Cut-off Current
ICBO VCB=100V, IE=0
Emitter Cut-off Current
IEBO VEB=5V, IC=0
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
VCEO IC=50mA, IB=0
hFE(1)
VCE(sat)
VCE=3V, IC=1.5A
IC=1.5A,IB=30mA
Base-Emitter Voltage
VBE VCE=3V,IC=1.5A
Min.
—
—
—
100
750
—
—
Typ. Max. Unit
— 0.2 mA
— 0.5 mA
— 2.0 mA
—
—
V
—
—
—
2.5
V
— 2.5 V