BD139 Datasheet, PDF(1/1 Page) Unisonic Technologies

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

BD139 Datasheet, PDF (1/1 Pages) Unisonic Technologies – NPN POWER TRANSISTORS

TIGER ELECTRONIC CO.,LTD

Product specification

Complementary Silicon Power Ttransistors

BD139 / BD140

DESCRIPTION

It is intented for use in power

amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)

Parameter

Value Unit

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Total Dissipation at

Max. Operating Junction Temperature

Storage Temperature

VCEO

VEBO

Ptot

Tstg

80 V

1.5 A

0.5 A

12.5 W

150 oC

-55~150 oC

TO-126

ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)

Parameter

Symbol Test Conditions

Collector Cut-off Current

ICEO VCB=80V, IE=0

Emitter Cut-off Current

IEBO VEB=5V, IC=0

Collector-Emitter Sustaining Voltage

DC Current Gain

VCEO

hFE(1)

hFE(2)

IC=30mA, IB=0

VCE=2V, IC=0.5A

VCE=2V, IC=150mA

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

VCE(sat)

VBE(sat)

IC=0.5A,IB=50mA

VCE=2V,IC=0.5A

Current Gain Bandwidth Product

VCE=10V,IC=500mA

Min.

Typ.

Max. Unit

10 uA

âV

250

0.5 V

1.0 V

â MHz